Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers
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چکیده
منابع مشابه
Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers
Metalorganic chemical vapor deposition-grown In0.4Ga0.6As0.995N0.005 quantum well ~QW! lasers have been realized, at an emission wavelength of 1.295 mm, with threshold and transparency current densities as low as 211 A/cm ~for L52000 mm! and 75 A/cm, respectively. The utilization of a tensile-strained GaAs0.67P0.33 buffer layer and GaAs0.85P0.15 barrier layers allows a highly-compressively-stra...
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Quantum dots laser diodes using the dots-in-a-well (DWELL) structure (InAs dots in an InGaAs quantum wells) have exhibited significant recent progress. With a single InAs dot layer in Inoi5Gao.8sAs quantum well, threshold current densities are as low as 26 A cm2 at 1 .25 xm. Quantum dot laser threshold current densities are now lower than any other reported semiconductor laser. In this work, th...
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Introduction: It has been predicted that the threshold current density of quantum dot lasers should be lower than that of quantum well lasers due to the reduction of density of states [1]. In particular, efforts have been made in the past few years to reduce the threshold current density of quantum dot lasers on GaAs substrates [2, 3]. A recently developed approach is to put the InAs dots in a ...
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We calculate the thermionic escape times of electrons and holes in InGaAsN and InGaAs quantum wells using the most recent input data. The short thermionic escape time of holes from the InGaAsN quantum well indicates that hole leakage may be a significant factor in the poorer temperature characteristics of InGaAsN quantum-well lasers compared to those of InGaAs devices. We suggest a structure th...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2002
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.1511290